Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics
نویسندگان
چکیده
In this study, indium (In)- and gallium (Ga)-doped zinc oxide (ZnO) ceramics, [Zn(1−x−y)GaxIny]O (x = 0, 0.02; y 0.005, 0.01, 0.02), were fabricated via spark plasma sintering (SPS) at 1423 K. Crystal structure microstructural analyses conducted to confirm the solubility of dopants understand correlations between crystallographic phases various compositions. It was confirmed that Ga 0.005) promoted by doping with Ga, highest power factor 0.99 mW K−2 m−1 acquired 1046 Furthermore, thermal conductivity 340–530 K reduced Ga.
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ژورنال
عنوان ژورنال: Ceramics International
سال: 2021
ISSN: ['0272-8842', '1873-3956']
DOI: https://doi.org/10.1016/j.ceramint.2021.05.101